Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires
Identifieur interne : 000791 ( Main/Repository ); précédent : 000790; suivant : 000792Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires
Auteurs : RBID : Pascal:13-0219156Descripteurs français
- Pascal (Inist)
- Propriété optique, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Puits quantique, Nanomatériau, Nanofil, Photoluminescence, Cathodoluminescence, Structure coeur couche, Synthèse nanomatériau, Méthode MOVPE, Dépendance énergie, Phosphure d'indium, Potentiel déformation, Formation image, InAs, Substrat indium phosphure, Substrat InP, Substrat wurtzite, InP, 7867, 8107T, 8535B, 8107S, Structure coeur coque.
English descriptors
- KwdEn :
- Cathodoluminescence, Core shell structure, Deformation potential, Energy dependence, III-V compound, III-V semiconductors, Imaging, Indium arsenides, Indium phosphide, MOVPE method, Nanomaterial synthesis, Nanostructured materials, Nanowires, Optical properties, Photoluminescence, Quantum dots, Quantum wells.
Abstract
Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for single core-shell InP-InAs wurtzite nanowires grown using metal-organic vapor phase epitaxy. Samples covering a radial InAs shell thickness of 1-12 ML were investigated. The effective masses for the wurtzite material were determined from the transition energy dependence of the InAs shell thickness, using a model based on linear deformation potential theory. InP cores with segments of mixed zincblende and wurtzite, on which quantum dots nucleated selectively, were also investigated. Narrow peaks were observed by μPL and the spatial origin of the emission was identified with CL imaging.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires</title><author><name sortKey="Lindgren, David" uniqKey="Lindgren D">David Lindgren</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lund University, Solid State Physics and the Nanometer structure consortium, Box 118</s1><s2>221 00, Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00, Lund</wicri:noRegion></affiliation></author><author><name sortKey="Kawaguchi, Kenichi" uniqKey="Kawaguchi K">Kenichi Kawaguchi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lund University, Solid State Physics and the Nanometer structure consortium, Box 118</s1><s2>221 00, Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00, Lund</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Fujitsu Laboratories Ltd</s1><s2>Morinosato-Wakamiya 10-1, Atsugi, 243-0197</s2><s3>JPN</s3><sZ>2 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Fujitsu Laboratories Ltd</wicri:noRegion></affiliation></author><author><name sortKey="Heurlin, Magnus" uniqKey="Heurlin M">Magnus Heurlin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lund University, Solid State Physics and the Nanometer structure consortium, Box 118</s1><s2>221 00, Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00, Lund</wicri:noRegion></affiliation></author><author><name sortKey="Borgstrom, Magnus T" uniqKey="Borgstrom M">Magnus T. Borgström</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lund University, Solid State Physics and the Nanometer structure consortium, Box 118</s1><s2>221 00, Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00, Lund</wicri:noRegion></affiliation></author><author><name sortKey="Pistol, Mats Erik" uniqKey="Pistol M">Mats-Erik Pistol</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lund University, Solid State Physics and the Nanometer structure consortium, Box 118</s1><s2>221 00, Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00, Lund</wicri:noRegion></affiliation></author><author><name sortKey="Samuelson, Lars" uniqKey="Samuelson L">Lars Samuelson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lund University, Solid State Physics and the Nanometer structure consortium, Box 118</s1><s2>221 00, Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00, Lund</wicri:noRegion></affiliation></author><author><name sortKey="Gustafsson, Anders" uniqKey="Gustafsson A">Anders Gustafsson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lund University, Solid State Physics and the Nanometer structure consortium, Box 118</s1><s2>221 00, Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00, Lund</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0219156</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0219156 INIST</idno><idno type="RBID">Pascal:13-0219156</idno><idno type="wicri:Area/Main/Corpus">000B66</idno><idno type="wicri:Area/Main/Repository">000791</idno></publicationStmt><seriesStmt><idno type="ISSN">0957-4484</idno><title level="j" type="abbreviated">Nanotechnology : (Bristol, Print)</title><title level="j" type="main">Nanotechnology : (Bristol. Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cathodoluminescence</term><term>Core shell structure</term><term>Deformation potential</term><term>Energy dependence</term><term>III-V compound</term><term>III-V semiconductors</term><term>Imaging</term><term>Indium arsenides</term><term>Indium phosphide</term><term>MOVPE method</term><term>Nanomaterial synthesis</term><term>Nanostructured materials</term><term>Nanowires</term><term>Optical properties</term><term>Photoluminescence</term><term>Quantum dots</term><term>Quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété optique</term><term>Arséniure d'indium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Point quantique</term><term>Puits quantique</term><term>Nanomatériau</term><term>Nanofil</term><term>Photoluminescence</term><term>Cathodoluminescence</term><term>Structure coeur couche</term><term>Synthèse nanomatériau</term><term>Méthode MOVPE</term><term>Dépendance énergie</term><term>Phosphure d'indium</term><term>Potentiel déformation</term><term>Formation image</term><term>InAs</term><term>Substrat indium phosphure</term><term>Substrat InP</term><term>Substrat wurtzite</term><term>InP</term><term>7867</term><term>8107T</term><term>8535B</term><term>8107S</term><term>Structure coeur coque</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for single core-shell InP-InAs wurtzite nanowires grown using metal-organic vapor phase epitaxy. Samples covering a radial InAs shell thickness of 1-12 ML were investigated. The effective masses for the wurtzite material were determined from the transition energy dependence of the InAs shell thickness, using a model based on linear deformation potential theory. InP cores with segments of mixed zincblende and wurtzite, on which quantum dots nucleated selectively, were also investigated. Narrow peaks were observed by μPL and the spatial origin of the emission was identified with CL imaging.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4484</s0></fA01><fA03 i2="1"><s0>Nanotechnology : (Bristol, Print)</s0></fA03><fA05><s2>24</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires</s1></fA08><fA11 i1="01" i2="1"><s1>LINDGREN (David)</s1></fA11><fA11 i1="02" i2="1"><s1>KAWAGUCHI (Kenichi)</s1></fA11><fA11 i1="03" i2="1"><s1>HEURLIN (Magnus)</s1></fA11><fA11 i1="04" i2="1"><s1>BORGSTRÖM (Magnus T.)</s1></fA11><fA11 i1="05" i2="1"><s1>PISTOL (Mats-Erik)</s1></fA11><fA11 i1="06" i2="1"><s1>SAMUELSON (Lars)</s1></fA11><fA11 i1="07" i2="1"><s1>GUSTAFSSON (Anders)</s1></fA11><fA14 i1="01"><s1>Lund University, Solid State Physics and the Nanometer structure consortium, Box 118</s1><s2>221 00, Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Fujitsu Laboratories Ltd</s1><s2>Morinosato-Wakamiya 10-1, Atsugi, 243-0197</s2><s3>JPN</s3><sZ>2 aut.</sZ></fA14><fA20><s2>225203.1-225203.5</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22480</s2><s5>354000503035780040</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>25 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0219156</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nanotechnology : (Bristol. Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for single core-shell InP-InAs wurtzite nanowires grown using metal-organic vapor phase epitaxy. Samples covering a radial InAs shell thickness of 1-12 ML were investigated. The effective masses for the wurtzite material were determined from the transition energy dependence of the InAs shell thickness, using a model based on linear deformation potential theory. InP cores with segments of mixed zincblende and wurtzite, on which quantum dots nucleated selectively, were also investigated. Narrow peaks were observed by μPL and the spatial origin of the emission was identified with CL imaging.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H67</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07T</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F18</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A07S</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Propriété optique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Optical properties</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Composé III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>III-V compound</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Point quantique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Quantum dots</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Puits quantique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Quantum wells</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Nanofil</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Nanowires</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Cathodoluminescence</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Cathodoluminescence</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Structure coeur couche</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Core shell structure</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Synthèse nanomatériau</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Nanomaterial synthesis</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Síntesis nanomaterial</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>MOVPE method</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Dépendance énergie</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Energy dependence</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Potentiel déformation</s0><s5>29</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Deformation potential</s0><s5>29</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Potencial deformación</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Formation image</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Imaging</s0><s5>30</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Substrat indium phosphure</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Substrat InP</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Substrat wurtzite</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>50</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>7867</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8107T</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8535B</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>8107S</s0><s4>INC</s4><s5>74</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Structure coeur coque</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Core shell structure</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="27" i2="3" l="SPA"><s0>Estructura núcleo cascarón</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>203</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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